IEEE C62.59-2019 pdf free
IEEE C62.59-2019 pdf free.IEEE Standard for Test Methods and Preferred Values for Silicon PN-Junction Clamping Diodes.
reverse direction (ora P junction): Direction of current that results when the N-type semiconductor region is at a positive voltagc relative to thc P-type region.
NOTE—See IEC 60050-521-05-04 I1t4
reverse voltage. VR Constant voltage applied to a diode in the reverse direction.
NOTE I—Sec 1EC60747.2:2016[BI lj.
NOTE 2—This term nomially applies to the portion of the reverse characteristic bcfore breakdown occurs,
semiconductor component: Component whose essential characteristics are due to the flow of charge camcrs within a semiconductor.
NOTE 1—See 1EC60050-521-04-0l jR4j.
NOTE 2—The definition includes components whose essential characteristics are only in part due to the flow olcharge carriers in a semiconductor but that are considered as semiconductor coniponcnts for thc purpose of specification
(semiconductor) diode: Two-terminal semiconductor component having an asymmetrical voltage-current characteristic.
NOTE 1— See IEC600SO-521-04-03 [H4j.
NOTE 2— Unless otherwise qualified, this term usually means a component with the soltage-current characteristic typical of a single PN junction.
NOTE 3— Voltage clamping diodes arc nonnally classified by clamping phenomenon: Zcncr. avalanche, loldhack. punch-through, and forward conduction. Acronyms such as AHD (avalanche breakdown diode). TVS (transient voltage suppressor). and SAD (silicon avalanche diode) may also be used.
snap-back voltage: Lowest voltage in the clamping characteristic after the punch-through voltage occurs.
NOTE —This punch-through diode cenn may also be applied to foldback diodes.
space-charge region: Region in which the net charge density is not zero.
NOTE 1—See IEC600SO-521-02-791B4J.
NOTE 2— The net charge is caused by electrons, holes, ionized acceptors. and donors.
storage temperature: Temperature at which the device may be stored without any voltage being applied. temperature coefficient of breakdown voltage aVBR: Ratio of the change in breakdown voltage VBR to changes in temperature.
NOTE- See IEC 61643-321 [B15].
thermal resistance: Quotient of the difference between the virtual temperature of the device and the temperature of a stated extermal reference point, by the steady-state power dissipation in the device.
NOTE 1- See IEC 60050-521-05-13 [B4].
NOTE 2- Expressed as either millivolts per degree Kelvin or per cent per degree Kelvin (mV/K or %/K).
terminal (of a semiconductor component): Conductive element provided for external connection.
NOTE- See IEC 60050-521-05-02 [B4].
total capacitance: Capacitance at the diode terminals, measured under specified bias conditions.
NOTE- See IEC 60747-3 [B12].
total power dissipation: Rated (maximum) value of the power that can be continuously dissipated by the diode at a specified ambient, case, or lead temperature without exceeding the maximum rated junction temperature.transient thermal impedance: Quotient of: a) the change in temperature difference between two specified points or regions at the end of a time interval, and b) the step-function change in power dissipation beginning at that time interval which causes the change in temperature difference.
NOTE 1- See IEC 60747-1 [B10].
NOTE 2- The term used in practice must indicate the two specified points or regions, for example, as in“junctioncase transient thermal impedance.” The use of the shortened term“transient thermal impedance” is permitted only if no ambiguity is likely to occur.IEEE C62.59 pdf free download.
